Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1980-04-25
1981-08-04
Rutledge, L. Dewayne
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
148 334, 148 335, 148175, 252 623ZT, 357 61, 423518, H01L 2926, H01L 2712
Patent
active
042820456
ABSTRACT:
A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
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Walpole et al., "Single Heterojunction PbSmTe Diode Lasers," Applied Phys Letters, vol. 23, No. 11, 1 Dec. 1973, pp. 620-622.
Jensen James D.
Schoolar Richard B.
Branning A. L.
Lashmit D. A.
Rutledge L. Dewayne
Saba W. G.
Sciascia R. S.
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