Pb/Bi-containing high-dielectric constant oxides using a non-P/B

Details Pb/Bi-containing high-dielectric constant oxides using a non-P/B Pb/Bi-containing high-dielectric constant oxides using a non-P/B

1993-09-27

1995-02-28

Thomas, Tom

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

437235, 437919, 148DIG14, 148DIG118, H01L 2912

Patent

active

053933524

ABSTRACT:
This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a buffer layer of non-Pb/Bi-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate; and depositing a Pb/Bi-containing high-dielectric constant oxide on the buffer layer. Alternately this may be a structure useful in semiconductor circuitry, comprising: a buffer layer 26 of non-lead-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate 10; and a lead-containing high-dielectric constant oxide 28 on the buffer layer. Preferably a germanium layer 12 is epitaxially grown on the semiconductor substrate and the buffer layer is grown on the germanium layer. When the substrate is silicon, the non-Pb/Bi-containing high-dielectric constant oxide layer is preferably less than about 10 nm thick. A second non-Pb/Bi-containing high-dielectric constant oxide layer 30 may be grown on top of the Pb/Bi-containing high-dielectric constant oxide and a conducting layer (top electrode 32) may also be grown on the second non-Pb/Bi-containing high-dielectric constant oxide layer.

REFERENCES:
patent: 4994435 (1991-02-01), Shiga et al.
patent: 5173835 (1992-12-01), Cornett et al.
patent: 5179070 (1993-01-01), Harada et al.
Horwitz, et al., "In Situ Deposition of Epitaxial PbZr.sub.x Ti.sub.(1-x) O.sub.3 Thin Films by Pulsed Laser Deposition", Appl. Phys. Lett; pp. 1565-1567 Sep. 1991.
Ramesh et al. "Ferrolectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin film heterostructure on silicon"; Appl. Phys. Lett. 59(4), 30 Sep. 1991; pp. 1782-1784.
"Study of Diffusion Barriers for PZT Deposited on Si for Non-Volatile Random-Access Memory Technology" Nalin R. Parikh, J. Todd Stephen, Max L. Swanson and Edward K. Myers; Material Research Society Symposium Proceedings 1990.

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