Patterning sub-lithographic features with variable widths

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S445000, C438S669000, C438S942000, C438S947000, C216S012000, C216S041000, C216S042000, C216S043000, C977S887000, C257SE21017, C257SE21018, C257SE21240, C257SE21249

Reexamination Certificate

active

07407890

ABSTRACT:
A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch the dummy layer forming patterned dummy elements of variable widths and exposing sidewalls of the dummy elements and portions of the top surface of the cap layer aside from the dummy elements. Deposit a spacer layer over the device covering the patterned dummy elements and exposed surfaces of the cap layer. Etch back the spacer layer forming sidewall spacers aside from the sidewalls of the patterned dummy elements spaced above a minimum spacing and forming super-wide spacers between sidewalls of the patterned dummy elements spaced less than the minimum spacing. Strip the patterned dummy elements. Expose portions of the substrate aside from the sidewall spacers. Pattern exposed portions of the substrate by etching into the substrate.

REFERENCES:
patent: 5023203 (1991-06-01), Choi
patent: 6514819 (2003-02-01), Choi
patent: 6709982 (2004-03-01), Buynoski et al.
patent: 7101759 (2006-09-01), Han
patent: 2003/0229868 (2003-12-01), White et al.
patent: 2006/0126153 (2006-06-01), Pan
patent: 2007/0065990 (2007-03-01), Degroote et al.
patent: 2004000700 (2004-01-01), None
Yang-Kyu Choi, Tsu-Jae King, and Chenming Hu, “A Spacer Patterning Technology for Nanoscale CMOS” IEEE Transactions on Electron Devices, vol. 49, No. 3, Mar. 2002.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Patterning sub-lithographic features with variable widths does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Patterning sub-lithographic features with variable widths, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning sub-lithographic features with variable widths will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4013982

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.