Patterning process using ladder-type organosiloxane resin and pr

Details Patterning process using ladder-type organosiloxane resin and pr Patterning process using ladder-type organosiloxane resin and pr

1985-05-29

1986-07-15

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430270, 430272, 430296, 430314, 430325, 430330, G03C 500

Patent

active

046006850

ABSTRACT:
A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R.sub.1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are independently selected from hydrogen, alkoxy (Cl-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.

REFERENCES:
patent: 4041190 (1977-03-01), Debois et al.
patent: 4349609 (1982-09-01), Takeda et al.
Debois et al., Electron and Ion Beam Science and Technology, Fifth International Conference (1972).
Takeda et al, Ladder-Organosiloxane Polymer as an Insulation Layer, extended abstracts, vol. 80-2, Oct. 1980.

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