Patterning process and undercoat-forming material

Details Patterning process and undercoat-forming material Patterning process and undercoat-forming material

2008-09-23

2008-09-23

Kelly, Cynthia H. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000

Reexamination Certificate

active

10872562

ABSTRACT:
A pattern is formed by applying an undercoat layer comprising a naphthol-dicyclopentadiene copolycondensate on a processable substrate as an antireflective film, applying a photoresist layer over the undercoat layer, exposing the photoresist layer to radiation, developing the resist with a developer to form a resist pattern, and dry etching the undercoat layer and the substrate through the photoresist layer as a mask. The undercoat layer has an optimum refractive index to provide a satisfactory antireflection effect at a film thickness of 200 nm or greater as well as high etching resistance. The shape of resist after patterning remains satisfactory.

REFERENCES:
patent: 5294680 (1994-03-01), Knors et al.
patent: 5525457 (1996-06-01), Nemoto et al.
patent: 5756255 (1998-05-01), Sato et al.
patent: 5783639 (1998-07-01), Kataoka et al.
patent: 5851730 (1998-12-01), Thackeray et al.
patent: 6013407 (2000-01-01), Kawata et al.
patent: 6316165 (2001-11-01), Pavelchek et al.
patent: 2002/0086934 (2002-07-01), Kawaguchi et al.
patent: 2004/0241577 (2004-12-01), Hatakeyama et al.
patent: 6-80760 (1994-03-01), None
patent: 6-118651 (1994-04-01), None
patent: 6-202317 (1994-07-01), None
patent: 7-5302 (1995-01-01), None
patent: 7-69611 (1995-07-01), None
patent: 07258385 (1995-10-01), None
patent: 8-179502 (1996-07-01), None
patent: 8-179509 (1996-07-01), None
patent: 8-220750 (1996-08-01), None
patent: 8-292565 (1996-11-01), None
patent: 9-15855 (1997-01-01), None
patent: 9-110938 (1997-04-01), None
patent: 10-69072 (1998-03-01), None
patent: 10-282666 (1998-10-01), None
patent: 10-324748 (1998-12-01), None
patent: 2953562 (1999-07-01), None
patent: 11-302382 (1999-11-01), None
patent: 2000010286 (2000-01-01), None
patent: 3050459 (2000-03-01), None
patent: 3082473 (2000-06-01), None
patent: 2000-294504 (2000-10-01), None
patent: 2001-40293 (2001-02-01), None
patent: 2002-14474 (2002-01-01), None
patent: 2002-55456 (2002-02-01), None
patent: 2002-214777 (2002-07-01), None
Brunsvold et al. “Evaluation of a deep bilayer resist for sub-half micron lithography”. SPIE vol. 1925, 1993, 377-387.
Hatakeyama et al. “Investigation of discrimination enhancement in polysilsesquioxane based positive resist for ArF lithography”. SPIE vol. 3333, 1998, 62-72.
Schaedeli et al. “Evaluation of materials for 193-nm lithography”. Journal of Photopolymer Science and Technology, vol. 9, No. 3, 1996, 435-446.
Kwong et al. “IBM 193nm bilayer resist: Materials, lithographic performance and optimization”, SPIE vol. 4345, 2001, 50-57.

Affiliated with

Also associated with

Rating

Patterning process and undercoat-forming material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Patterning process and undercoat-forming material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Patterning process and undercoat-forming material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3945414