Patterning process and resist composition

Details Patterning process and resist composition Patterning process and resist composition

2008-02-12

2010-06-22

Chu, John S (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S270100, C430S326000, C430S330000, C430S910000, C430S919000, C430S920000, C430S921000, C430S922000

Reexamination Certificate

active

07741015

ABSTRACT:
A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.

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M. Maendhoudt et al; “Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm”; Proc. SPIE vol. 5754, pp. 1508-1517 (2005).

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