Patterning of submicrometer metal silicide structures

Details Patterning of submicrometer metal silicide structures Patterning of submicrometer metal silicide structures

1983-12-19

1984-07-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148186, 156646, 156651, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044604351

ABSTRACT:
A method is disclosed of forming elongated strips, e.g. interconnections, of a doped polycrystalline silicon/refractory metal silicide structure having a width less than about one micrometer over a vertical step in a substrate wherein the walls of the substrate, after etching, are free of impurity deposits called stringers. The subject method comprises isotropically etching said structure utilizing a resist pattern having a width substantially larger than one micrometer, redefining the resist pattern to the desired width and anisotropically etching the structure to the desired width.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4372034 (1983-02-01), Bohr
patent: 4411734 (1983-10-01), Maa
patent: 4417947 (1983-11-01), Pan

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