Patterning of indium-tin oxide via selective reactive ion etchin

Details Patterning of indium-tin oxide via selective reactive ion etchin Patterning of indium-tin oxide via selective reactive ion etchin

1991-11-14

1994-06-07

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156667, H05H 100

Patent

active

053186648

ABSTRACT:
Indium-tin oxide is selective etched relative to silicon, molybdenum, aluminum, titanium, silicon oxide and silicon nitride using an organic radical and oxygen containing plasma which contains sufficient oxygen to prevent deposition of undesirable films on non-etching portions of the component being etched and on the reactor surfaces. The plasma lacks halogenated gases. A minimum differential etch rate of 8:1 of indium-tin oxide to silicon results with the other materials etching slower than silicon or not at all.

REFERENCES:
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4878993 (1989-11-01), Rossi et al.
patent: 4892613 (1990-01-01), Motai et al.
patent: 5032221 (1991-07-01), Roselle et al.
patent: 5079178 (1992-01-01), Chouan et al.
"Selective Reactive Ion Etching of Indium-Tin Oxide in a Hydrocarbon Gas Mixture", R. J. Saia et al., Journal of the Electrochemical Society, vol. 138, No. 2, Feb. 1991 pp. 493-496.

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