Patterning of indium-tin oxide (ITO) for precision-cutting...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S312000, C430S316000, C430S321000, C430S394000

Reexamination Certificate

active

07351519

ABSTRACT:
A method of improved patterning of indium-tin oxide (ITO) for precision-cutting and aligning a liquid crystal display (LCD) panel includes depositing a transparent ITO layer upon a transparent substrate, depositing a non-transparent plating layer upon the transparent ITO layer and depositing a photoresist layer upon the non-transparent plating layer. The photoresist layer is patterned, exposed and developed to form a plurality of photoresist lines. The photoresist lines are exposed again in an active area only and the plating layer is etched to form a plurality of non-transparent plated lines. The ITO layer is then etched to form a plurality of ITO lines. The photoresist lines are then developed and the non-transparent plated lines are etched away in the active area only. The photoresist that is outside the active area is then removed.

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