Patterning of dielectric with added layers of materials...

Details Patterning of dielectric with added layers of materials... Patterning of dielectric with added layers of materials...

2005-06-07

2005-06-07

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

C430S322000, C430S324000, C438S622000, C438S638000

Reexamination Certificate

active

06902870

ABSTRACT:
For patterning an opening through a patterned material, a coating material, a slow-etch material, and a photoresist material are deposited over the patterned material. The opening is patterned through the photoresist material, and the slow-etch material exposed through the opening is etched away. The photoresist material and the coating material exposed through the opening are then etched away. A remaining portion of the slow-etch hard-mask material and the patterned material exposed through the opening are then etched away such that the coating material outside of the opening is exposed. A remaining portion of the coating material is then etched away with an etch agent that does not etch the patterned material.

REFERENCES:
patent: 6399512 (2002-06-01), Blosse et al.
patent: 2002/0031906 (2002-03-01), Jiang et al.
patent: 2002/0182894 (2002-12-01), Andideh

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