Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000, C257SE21017
Reexamination Certificate
active
07994053
ABSTRACT:
A method for forming a metal oxide thin film pattern using nanoimprinting according to one embodiment of the present invention includes: coating a photosensitive metal-organic material precursor solution on a substrate; pressurizing the photosensitive metal-organic material precursor coating layer to a mold patterned to have a protrusion and depression structure; forming the metal oxide thin film pattern by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer to cure it; and removing the patterned mold from the metal oxide thin film pattern.
REFERENCES:
patent: 7384809 (2008-06-01), Donofrio
patent: 2008/0217813 (2008-09-01), Chou
patent: 2007-080455 (2007-03-01), None
patent: 10-2007-0102263 (2007-10-01), None
patent: 10-2009-0019200 (2009-02-01), None
Choi Dae-Geun
Choi Jun-Hyuk
Jeon So-Hee
Jeong Jun-Ho
Kim Ki-Don
Korea Institute of Machinery & Materials
Lexyoume IP Group, PLLC.
Pham Hoai v
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