Patterning method for epitaxial lift-off processing

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156658, 1566591, 156662, 437228, H01L 2100

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active

052019969

ABSTRACT:
In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material to be processed may be covered with a support layer of a material which is selected in view of desired mechanical and thermal properties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means such as a heated stylus or roller.

REFERENCES:
patent: 3290192 (1966-12-01), Kelley
patent: 4035226 (1977-07-01), Farber et al.
patent: 4325779 (1982-04-01), Rossetti
patent: 4818336 (1989-04-01), Rossetti
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
E. Yablonovitch et al., Extreme Selectivity in the Lift-off of Epitaxial GaAs Films, Appl. Phys. Lett. 51 (1987), pp. 2222-2224.
E. Yablonovitch et al., Regrowth of GaAs Quantum Wells on GaAs Liftoff Films . . . , Electronics Letters 25 (1989), p. 171.
E. Yablonovitch et al., Double Heterostructure GaAs/AlGaAs Thin Film Diode . . . , IEEE Photonics Tech. Lett. 1 (1989), pp. 41-42.

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