Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-04-12
2005-04-12
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S164000, C438S960000, C117S090000
Reexamination Certificate
active
06878611
ABSTRACT:
In the preferred embodiment of this invention a method is described to convert patterned SOI regions into patterned SGOI (silicon-germanium on oxide) by the SiGe/SOI thermal mixing process to further enhance performance of the logic circuit in an embedded DRAM. The SGOI region acts as a template for subsequent Si growth such that the Si is strained, and electron and holes in the Si have higher mobility.
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Bedell Stephen W.
Chen Tze-Chiang
Choe Kwang Su
Fogel Keith E.
Sadana Devendra K.
Petraske Eric W.
Schnurmann H. Daniel
Wilczewski M.
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