Patterned backside stress engineering for transistor...

Details Patterned backside stress engineering for transistor... Patterned backside stress engineering for transistor...

2008-04-03

2010-10-26

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062

Reexamination Certificate

active

07821073

ABSTRACT:
Some embodiments of the present invention include selectively inducing back side stress opposite transistor regions to optimize transistor performance.

REFERENCES:
patent: 7081669 (2006-07-01), Fitzgerald et al.
patent: 2003/0162368 (2003-08-01), Connell et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2006/0199353 (2006-09-01), Kub et al.

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