Patterned backside stress engineering for transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27062

Reexamination Certificate

active

07821073

ABSTRACT:
Some embodiments of the present invention include selectively inducing back side stress opposite transistor regions to optimize transistor performance.

REFERENCES:
patent: 7081669 (2006-07-01), Fitzgerald et al.
patent: 2003/0162368 (2003-08-01), Connell et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2006/0199353 (2006-09-01), Kub et al.

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