Pattern transfer process utilizing multilevel resist structure f

Details Pattern transfer process utilizing multilevel resist structure f Pattern transfer process utilizing multilevel resist structure f

1988-02-08

1990-01-09

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419235, 156643, 156646, 156657, 1566591, H01L 21312

Patent

active

048926353

ABSTRACT:
Reactive ion etching of the planarizing layer of a multilevel resist structure utilized to make integrated-circuit devices is carried out employing a plasma derived from carbon dioxide. The etching step is characterized by high throughput, good linewidth control, negligible radiation damage and low sensitivity to process parameter variations.

REFERENCES:
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4523976 (1985-06-01), Bukhman
patent: 4528438 (1985-07-01), Poulsen et al.
patent: 4536249 (1985-08-01), Rhodes
patent: 4568598 (1986-02-01), Bilkadi et al.

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