Pattern Measurement method

Radiant energy – Inspection of solids or liquids by charged particles – Methods

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Details

250310, 382 22, 356376, H01J 3128

Patent

active

049103989

ABSTRACT:
This method is a method of measuring a taper angle, a thickness or a depth of a semiconductor integrated circuit pattern. Electron beam, light beam or the like is irradiated to a semiconductor integrated circuit pattern provided on a reference plane, thus to form a projected image. The projected image forms a predetermined angle with respect to a reference line set with respect to the reference plane. Then, lengths in a direction of the reference line of the projected images of symmetrical side walls of the pattern are measured to calculate from the ratio of those lengths and angle that the side walls and the reference plane form.

REFERENCES:
patent: 4725730 (1988-02-01), Kato et al.

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