Pattern mask with features to minimize the effect of...

Details Pattern mask with features to minimize the effect of... Pattern mask with features to minimize the effect of...

2006-09-12

2006-09-12

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000, C430S396000

Reexamination Certificate

active

07105278

ABSTRACT:
A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the three-fold symmetry without altering the semiconductor features that are formed. This accomplished by adding features to the mask that break up the symmetry. One way of achieving that result is to make the added features of “sub-resolution” size that do not produce features on the exposed wafer. Another way of achieving that result is to change existing features that do form structures in such a way (e.g., with optical elements) that changes the relative phase, amplitude or other characteristic of light transmitted through those features.

REFERENCES:
patent: 5932491 (1999-08-01), Wald et al.
patent: 6114095 (2000-09-01), Nakabayashi et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6144109 (2000-11-01), Stanton et al.
patent: 6214497 (2001-04-01), Stanton
patent: 6238824 (2001-05-01), Futrell et al.
patent: 6242816 (2001-06-01), Stanton et al.
patent: 6245468 (2001-06-01), Futrell et al.
patent: 6258489 (2001-07-01), Stanton et al.
patent: 6284419 (2001-09-01), Pierrat et al.
patent: 6319644 (2001-11-01), Pierrat et al.
patent: 2001/0002304 (2001-05-01), Pierrat et al.
patent: 2001/0023043 (2001-09-01), Futrell et al.
patent: 2001/0023045 (2001-09-01), Pierrat et al.
patent: 2001/0033979 (2001-10-01), Baggenstoss
Peterson, J.S., “Analytical Description of Anti-scattering and Scattering Bar Assist Features,”Proceedings of SPIE: Optical Microlithography XIII, vol. 4000, pp. 77-89 (Mar. 1-3, 2000).

Affiliated with

Also associated with

Rating

Pattern mask with features to minimize the effect of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern mask with features to minimize the effect of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern mask with features to minimize the effect of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3573573