Pattern forming method using charged particle beam process and c

Details Pattern forming method using charged particle beam process and c Pattern forming method using charged particle beam process and c

1997-01-27

1999-11-02

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419211, 20429804, 20429836, 2504923, 156345, 216 62, 216 66, C23C 1434

Patent

active

059763280

ABSTRACT:
A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

REFERENCES:
patent: 3410774 (1968-11-01), Barson et al.
patent: 4639301 (1987-01-01), Doherty et al.
patent: 4950498 (1990-08-01), Kaito
patent: 4976843 (1990-12-01), Ward et al.
patent: 5064520 (1991-11-01), Miyake et al.

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