Pattern forming method, semiconductor device manufacturing...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S394000, C430S005000, C430S322000, C430S313000, C430S323000, C430S330000

Reexamination Certificate

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07459265

ABSTRACT:
First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region.

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patent: WO99/65066 (1999-12-01), None

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