Pattern forming method, semiconductor device manufacturing...

Details Pattern forming method, semiconductor device manufacturing... Pattern forming method, semiconductor device manufacturing...

2011-08-30

2011-08-30

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S725000, C438S736000, C257SE21026, C257SE21027

Reexamination Certificate

active

08008211

ABSTRACT:
A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

REFERENCES:
patent: 5357131 (1994-10-01), Sunami et al.
patent: 7572572 (2009-08-01), Wells
patent: 2008/0014533 (2008-01-01), Keller et al.
patent: 2006-261307 (2006-09-01), None

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