Pattern forming method, mask manufacturing method, and LSI...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

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07346882

ABSTRACT:
A pattern forming method includes the steps of checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern; dividing a design pattern size into a smaller area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group; acquiring correction information of the size of the pattern of each the small area by using the size change characteristic; and forming a desired pattern based on the acquired correction information.

REFERENCES:
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T. Abe, et al., J. Vac. Sci. Technol. B, vol. 9, No. 6, pp. 3059-3062, “The Representative Figure Method for the Proximity Effect Correction [III],” Nov./Dec. 1991.

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