Pattern forming method and system, and method of...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S030000

Reexamination Certificate

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07402363

ABSTRACT:
A pattern forming method of forming a desired pattern on a semiconductor substrate is disclosed, which comprises extracting a first pattern of a layer, extracting a second pattern of one or more layers overlapped with the layer, the second pattern being arranged close to or overlapped with the first pattern, calculating a distance between the first and second patterns on a semiconductor substrate in consideration of a predetermined process variation, determining whether or not the distance between the first and second patterns satisfy an allowable margin given for the distance between the first and second patterns, and correcting, if the distance does not satisfy the allowable margin, at least one of the first and second patterns to satisfy the allowable margin.

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patent: 6570174 (2003-05-01), Tounai et al.
patent: 6853743 (2005-02-01), Kotani et al.
patent: 2005/0034093 (2005-02-01), Yamauchi
patent: 09-319067 (1997-12-01), None
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patent: 2000-258892 (2000-09-01), None
patent: 2001-083689 (2001-03-01), None
patent: 2002-131882 (2002-05-01), None

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