Semiconductor device having fuse area surrounded by...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S173000, C257S209000, C257SE23149, C438S132000, C438S215000, C438S281000

Reexamination Certificate

active

07402887

ABSTRACT:
A semiconductor device has a semiconductor substrate, first and second insulating layers, a fuse, a diffusion layer and a conductive pattern. The first insulating layer is selectively formed on a surface of the semiconductor substrate. The fuse is formed on the first insulating layer. The diffusion layer is formed on the surface of the semiconductor substrate. The diffusion layer is applied to a fixed potential. The second insulating layer is formed on the fuse. The conductive pattern is formed on the second insulating layer. The conductive pattern surrounds the fuse. Further, the conductive pattern is electrically connected to the diffusion layer.

REFERENCES:
patent: 4723155 (1988-02-01), Uchida
patent: 6046488 (2000-04-01), Kawasaki et al.
patent: 6373120 (2002-04-01), Oiyama
patent: 6933591 (2005-08-01), Sidhu et al.
patent: 7180154 (2007-02-01), Cho et al.
patent: 2003/0116820 (2003-06-01), Daubenspeck et al.
patent: 2004/0038458 (2004-02-01), Marr
patent: 11-67054 (1999-03-01), None
patent: 11-067054 (1999-09-01), None
patent: 3526853 (2004-02-01), None

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