Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-01-30
2010-02-16
Hull, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S005000, C430S285100, C430S394000
Reexamination Certificate
active
07662542
ABSTRACT:
A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
REFERENCES:
patent: 4873177 (1989-10-01), Tanaka et al.
patent: 6093508 (2000-07-01), Cote
patent: 2003/0036603 (2003-02-01), Hasegawa et al.
patent: 2004/0029047 (2004-02-01), Ishibashi et al.
patent: 2004/0048200 (2004-03-01), Ishibashi
patent: 2004/0072096 (2004-04-01), Terai et al.
patent: 07-130651 (1995-05-01), None
patent: 07130651 (1995-05-01), None
patent: 3057879 (2000-04-01), None
patent: 3057879 (2000-07-01), None
patent: 2002-217170 (2002-08-01), None
patent: 2003-140361 (2003-05-01), None
patent: 2003140361 (2003-05-01), None
patent: 2004-77951 (2004-03-01), None
patent: 2004-093832 (2004-03-01), None
English translation: JP 2004077951, date: Mar. 2004, inventor: Ozawa et al.
English translation: JP 2002217170, date: Aug. 2002, inventor: Mansei, Akira.
Notification of Reasons for Rejection issued by the Japanese Patent Office on Feb. 26, 2008, for Japanese Patent Application No. 2005-23923, and English-language translation thereof.
Notice of Reasons for Rejection mailed Jul. 1, 2008, from the Japanese Patent Office in counterpart Japanese Application No. 2005-023923.
Kobayashi Yuji
Kondoh Takehiro
Shiobara Eishi
Sho Koutarou
Alam Rashid
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hull Mark F
Kabushiki Kaisha Toshiba
LandOfFree
Pattern forming method and semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pattern forming method and semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method and semiconductor device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4203895