Pattern forming method and manufacturing method of...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S700000

Reexamination Certificate

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07851363

ABSTRACT:
A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

REFERENCES:
patent: 5667922 (1997-09-01), Martiska et al.
patent: 6372413 (2002-04-01), Ema et al.
patent: 6383723 (2002-05-01), Iyer et al.
patent: 6742944 (2004-06-01), Takahashi et al.
patent: 6788477 (2004-09-01), Lin
patent: 2001/0024765 (2001-09-01), Okazaki et al.
patent: 2003/0062599 (2003-04-01), Egami et al.
patent: 2003/0064609 (2003-04-01), Iseki et al.
patent: 2004/0002784 (2004-01-01), Yoshida et al.
patent: 2004/0043310 (2004-03-01), Takeishi et al.
patent: 2004/0121606 (2004-06-01), Raskin et al.
patent: 2-74948 (1990-03-01), None
patent: 4-206625 (1992-07-01), None
patent: 4-290012 (1992-10-01), None
patent: 06-084787 (1994-03-01), None
patent: 06-124873 (1994-05-01), None
patent: 8-51061 (1996-02-01), None
patent: 2001-127033 (2001-05-01), None
Wolf, Stanley. Silicon Processing for the VLSI Era, 2000, Lattice Press, vol. 1, 141, 524-526.
Quirk, Michael. Semiconductor Manufacturing Technology. 2001. Prentice-Hall, 345-347.
Notification of Reasons for Rejection mailed Jan. 17, 2006, issued by the Japanese Patent Office in counterpart Japanese Application No. 2004-008290 and English translation thereof.

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