Pattern-forming method and lithographic system

Details Pattern-forming method and lithographic system Pattern-forming method and lithographic system

1999-10-01

2000-07-25

Anderson, Bruce C.

Radiant energy

Luminophor irradiation

2504911, 250398, H01J 3730

Patent

active

060939311

ABSTRACT:
A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

REFERENCES:
patent: 4712013 (1987-12-01), Nishimura et al.
patent: 4812662 (1989-03-01), Goto et al.
patent: 5789140 (1998-08-01), Chou et al.
patent: 5989759 (1999-11-01), Ando et al.
F. Benistant et al., "A heavy ion implanted pocket 0.10 .mu.m n-type metal-oxide-semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process", J. Vac. Sci. Technol. B 14(6), pp. 4051-4054, Nov./Dec. 1996.
R. Jonckheere et al., Electron beam / DUV intra-level mix-and-match lithography for random logic 0.25 .mu.m CMOS, Microelectronic Engineering 27, pp. 231-234, 1995.

Affiliated with

Also associated with

Rating

Pattern-forming method and lithographic system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern-forming method and lithographic system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern-forming method and lithographic system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338207