Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2011-07-05
2011-07-05
Duda, Kathleen (Department: 1722)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S330000
Reexamination Certificate
active
07972765
ABSTRACT:
A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.
REFERENCES:
patent: 6100012 (2000-08-01), Shi
patent: 6235439 (2001-05-01), Whiting
patent: 6801295 (2004-10-01), Inomata et al.
patent: 6881058 (2005-04-01), Kawano et al.
patent: 6883158 (2005-04-01), Sandstrom et al.
patent: 7563561 (2009-07-01), Kawano et al.
patent: 2004/0197713 (2004-10-01), Ohfuji et al.
patent: 2005/0130058 (2005-06-01), Rahman
patent: 2000-277423 (2000-10-01), None
patent: 2001-102282 (2001-04-01), None
patent: 2002-252167 (2002-09-01), None
patent: WO 00/72090 (2000-11-01), None
Notification for Filing Opinion in the First Examination, dated Feb. 17, 2009, and First Examination from the Taiwan Patent Office.
Hayasaki Kei
Kawano Kenji
Shibata Tsuyoshi
Duda Kathleen
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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