Pattern forming method

Details Pattern forming method Pattern forming method

1984-09-13

1986-03-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156653, 156656, 156657, 1566611, 156904, 204192EC, 427 88, H01L 21306, C23F 102, B44C 122, C03C 1500

Patent

active

045766789

ABSTRACT:
A pattern forming method for semiconductor devices in which a film layer of a compound containing silicon and nitrogen is formed between a substrate and a resist layer with a desired pattern readily formed utilizing a lift-off technique. A first film layer of a compound such as Si.sub.3 N.sub.4 is formed on a semiconductor substrate with a resist film layer formed in a desired pattern upon the first film layer. The first film layer is etched using the resist film layer as a mask. A second film layer is then formed on the substrate after which the first film layer is removed with an etchant which does not attack the second film layer.

REFERENCES:
patent: 4132586 (1979-01-01), Schaible et al.
patent: 4181564 (1980-01-01), Fogarty et al.
patent: 4283439 (1981-08-01), Higashinakagawa et al.
patent: 4351894 (1982-09-01), Yonezawa et al.

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