Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1984-12-12
1986-01-14
Brammer, Jack P.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430311, 430322, 430325, 528 26, 528 42, G03C 500
Patent
active
045645795
ABSTRACT:
A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
REFERENCES:
patent: 3741932 (1973-06-01), Smith et al.
patent: 3813364 (1974-05-01), DeZuba et al.
"Double Layer Resist Systems for High Resolution Lithography", Hatzakis et al., IBM Thomas J. Watson Research Center, Sep. 1981.
Imamura Saburo
Kogure Osamu
Morita Masao
Tamamura Toshiaki
Tanaka Akinobu
Brammer Jack P.
Nippon Telegraph & Telephone Public Corporation
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