Pattern forming material and pattern forming method

Details Pattern forming material and pattern forming method Pattern forming material and pattern forming method

1999-06-07

2000-09-19

Gibson, Sharon

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430323, 430324, G03F 700

Patent

active

061209740

ABSTRACT:
A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.

REFERENCES:
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patent: 5015559 (1991-05-01), Ogawa
patent: 5278029 (1994-01-01), Shirai et al.
patent: 5650261 (1997-07-01), Winkle
patent: 5741628 (1998-04-01), Matsuo
Shirai et al., "Photosensitive polymers bearing iminooxysulfonyl groups. A water soluble positive-type photoresist", Die Makromol. Chemie. Macromolecular Chemistry and Physics, vol. 90, No. 9, pp. 2099-2107 (1989).
Shirai et al., 114:63167, Chemical Abstracts, America Chemical Society, Columbus, Ohio, Abstract of J. Appl. Polym. Sci. (1990), vol. 41, No. 9-10, pp. 2527-2532.

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