Pattern-forming material and method of forming pattern

Details Pattern-forming material and method of forming pattern Pattern-forming material and method of forming pattern

2006-05-09

2006-05-09

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S325000, C430S326000, C430S905000, C430S907000, C430S910000, C430S914000, C430S945000, C430S966000, C430S967000

Reexamination Certificate

active

07041428

ABSTRACT:
A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and, and an acid generator:Chemical Formula 1:wherein R1is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; and R2is a protecting group released by an acid.

REFERENCES:
patent: 4689289 (1987-08-01), Crivello
patent: 5876900 (1999-03-01), Watanabe et al.
patent: 6576392 (2003-06-01), Sato et al.
patent: 6916592 (2005-07-01), Harada et al.
patent: 2002/0081524 (2002-06-01), Uetani et al.
patent: 773478 (1997-05-01), None
patent: 791856 (1997-08-01), None
patent: 11-218926 (1999-08-01), None
patent: 2000-330289 (2000-11-01), None
patent: 2000-330289 (2000-11-01), None
patent: 2002-322217 (2002-11-01), None
patent: 2002-333715 (2002-11-01), None
Fujigaya et al, “A New Photoresist Material for 157 nm Lithography-2”, Journal of Photopolymer Science and Technology, vol. 15, No. 4 (2002) p. 643-654.

Affiliated with

Also associated with

Rating

Pattern-forming material and method of forming pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern-forming material and method of forming pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern-forming material and method of forming pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3628613