Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1987-03-16
1989-09-05
Michl, Paul R.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430270, 430325, 430296, 430312, 430313, 430327, 430271, 430287, 156643, 528 10, G03C 171, C08G 7700
Patent
active
048638331
ABSTRACT:
A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.
REFERENCES:
patent: 4600685 (1986-07-01), Kitakohji et al.
International Polymer Science and Technology, vol. 8, No. 9, 1981, pp. T51-T53, Shawbury, Shrewsbury, GB; T. V. Vasil Eva et al.: "Influence of the Conditions of Continuous Hydrolysis of Methyltrichlorosilane on the Composition of the Reaction Products", p. T51, col. 2, lines 2-15; p. T52, formulas.
Patents Abstracts of Japan, vol. 6, No. 245 (P-159) [1123], 3rd Dec. 1982; & JP-A-57 141 642 (Fujitsu K.K.) 02-09-1982.
Patents Abstracts of Japan, vol. 6, No. 245 (P-159) [1123], 3rd Dec. 1982; & JP-n A-57 141 641 (Fujitsu K.K.) 02-09-1982.
Fukuyama Shun-ichi
Miyagawa Masashi
Nishii Kota
Yoneda Yasuhiro
Fujitsu Limited
Hamilton Cynthia
Michl Paul R.
LandOfFree
Pattern-forming material and its production and use does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pattern-forming material and its production and use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern-forming material and its production and use will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243030