Pattern formation method

Details Pattern formation method Pattern formation method

2011-05-17

2011-05-17

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S316000, C430S394000, C430S312000

Reexamination Certificate

active

07943285

ABSTRACT:
After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

REFERENCES:
patent: 2005/0266342 (2005-12-01), Kim et al.
patent: 2006/0014106 (2006-01-01), Hatakeyama et al.
patent: 2006/0105272 (2006-05-01), Gallagher et al.
patent: 2006/0160028 (2006-07-01), Lee et al.
patent: 2006/0231524 (2006-10-01), Liu et al.
patent: 2007/0287105 (2007-12-01), Ito et al.
patent: 2008/0299494 (2008-12-01), Bencher et al.
Maenhoudt, M. et al., “Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm,” Optical Microlithography XVIII, vol. 5754, pp. 1508-1518, Bellingham, WA 2005.

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