Pattern formation method

Details Pattern formation method Pattern formation method

2007-08-14

2007-08-14

Visconti, Geraldina (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000, C430S312000, C430S313000

Reexamination Certificate

active

11260385

ABSTRACT:
In a pattern formation method, a resist film including a compound having a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.

REFERENCES:
patent: 6017680 (2000-01-01), Hattori et al.
patent: 2002/0142251 (2002-10-01), Endo et al.
patent: WO 02/44845 (2002-06-01), None
T. Kudo et al., “Illumination, Acid Diffusion and Process Optimization Considerations for 193 nm Contact Hole Resists”, Proc. SPIE, vol. 4690, p. 150 (2002).
Y. Uetani et al., “Positive ArF Resist With 2EAdMA/GBLMA Resin System”, vol. 3678, No. 1, Mar. 1999, pp. 510-517, XP002385141.
Search Report dated Jun. 13, 2006.

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