Pattern formation method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S324000, C430S327000, C430S330000

Reexamination Certificate

active

07029827

ABSTRACT:
After forming a resist film from a positive chemically amplified resist material, an insolubilization treatment for making the surface of the resist film insoluble in a developer is carried out. After the insolubilization treatment, pattern exposure is performed by selectively irradiating the resist film with exposing light. Thereafter, the resist film is developed so as to form a resist pattern made of an unexposed portion of the resist film.

REFERENCES:
patent: 6054255 (2000-04-01), Nakaoka et al.
patent: 2003-29410 (2003-01-01), None

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