Pattern formation method

Details Pattern formation method Pattern formation method

2006-03-14

2006-03-14

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Processing feature prior to imaging

C430S322000, C430S330000

Reexamination Certificate

active

07011934

ABSTRACT:
An underlying film having pores or including an organic material is formed on a substrate. In a first chamber, hexamethyldisilazane is supplied onto the surface of the underlying film while annealing the substrate, so as to form a first molecular layer of trimethylsilyl groups on the underlying film. Thereafter, the underlying film is allowed to stand outside the first chamber. Next, in a second chamber, hexamethyldisilazane is supplied onto the surface of the first molecular layer, so as to form a second molecular layer of trimethylsilyl groups on the first molecular layer. Then, a resist film made of a chemically amplified resist material is formed above the underlying film having the second molecular layer thereon. The resist film is subjected to pattern exposure by selectively irradiating with exposing light, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

REFERENCES:
patent: 5501739 (1996-03-01), Yamada et al.
patent: 5576247 (1996-11-01), Yano et al.
patent: P2002-353308 (2002-12-01), None

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