Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging radiant energy exposure
Reexamination Certificate
2005-06-21
2005-06-21
Duda, Kathleen (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging radiant energy exposure
C430S322000
Reexamination Certificate
active
06908729
ABSTRACT:
A resist film is formed from a chemically amplified resist material containing a base polymer including at least one ester out of acrylate and methacrylate and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band, and is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film. The resist pattern is then annealed, so as to smooth roughness having been caused on the resist pattern.
REFERENCES:
patent: 6582891 (2003-06-01), Hallock et al.
patent: 6730458 (2004-05-01), Kim et al.
patent: 2002/0045105 (2002-04-01), Brown et al.
patent: 2002-15971 (2002-01-01), None
Endo Masayuki
Sasago Masaru
Duda Kathleen
McDermott Will & Emery LLP
LandOfFree
Pattern formation method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pattern formation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern formation method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3497370