Pattern formation method

Details Pattern formation method Pattern formation method

1997-07-14

1999-02-02

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430327, 430330, 438760, G03F 700

Patent

active

058663029

ABSTRACT:
A BPSG film is formed on a semiconductor substrate and caused to reflow under an atmosphere of flowing Ar gas. Then, a chemically amplified resist is applied to the surface of the BPSG film to form a resist film, which is exposed to the irradiation of a KrF excimer laser through a mask. Since no lone pair of electrons exists on the surface of the BPSG film, an acid in the resist film is not deactivated and hence a reaction is evenly induced by an acid catalyst. After the development of the resist film, a resist pattern having an excellent profile with no footing is obtained.

REFERENCES:
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5285102 (1994-02-01), Ying
patent: 5369061 (1994-11-01), Nagayama
patent: 5552342 (1996-09-01), Itou
patent: 5656556 (1997-08-01), Yang
patent: 5670404 (1997-09-01), Dai

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