Pattern formation method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430327, G03C 500

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active

058466924

ABSTRACT:
After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.

REFERENCES:
patent: 3549368 (1970-12-01), Collins et al.
Endo, M. et al., "Stable Process for Chemically Amplified Resists Using a New Adhesion Promoter", Proceedings of the Spie, vol. 2724, pp. 139-148, Mar. 11, 1996.
Mittal, K.L., "Factors Affecting Adhesion of Lithographic Materials", Solid State Techology, vol. 22, No. 5, pp. 89-95, May 1979.

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