Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-11-20
2007-11-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C257SE21705
Reexamination Certificate
active
11032342
ABSTRACT:
A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.
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Peter Van Zant; “Microchip Fabrication: A Practical Guide to Semiconductor Processing;” 1997 , McGraw-Hill, p. 100.
Negley Gerald H.
Plunket Christopher Sean
Schneider Thomas P.
Slater, Jr. David B.
Tuttle Ralph C.
Cree Inc.
Lebentritt Michael
Stevenson Andre′
Summa, Allan & Addition, P.A.
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