Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction
Reexamination Certificate
2005-06-07
2005-06-07
Niebling, John F. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
With specified shape of pn junction
Reexamination Certificate
active
06903446
ABSTRACT:
A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.
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Negley Gerald H.
Plunket Christopher Sean
Schneider Thomas P.
Slater, Jr. David B.
Tuttle Ralph C.
Cree Inc.
Niebling John F.
Stevenson André
Summa & Allan P.A.
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