Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2007-05-16
2011-10-18
Mitchell, James (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C438S484000, C438S539000
Reexamination Certificate
active
08039373
ABSTRACT:
A pattern film forming method includes a step of producing a transfer sheet in which a thin film is formed on a surface of a sheet-shaped material and a step of pressing the thin film against a pattern film formation surface of the substrate with a pressing member having convex portions corresponding to the pattern film from a reverse surface of the transfer sheet opposite to the thin film or a reverse surface of the substrate opposite to the pattern film formation surface to transfer the thin film to the substrate. A pattern film forming apparatus includes a sheet supply device, a pressing device and a substrate transport device. A high-definition pattern film having a desired pattern and a sharp edge can be formed with high productivity.
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Notification of Reasons for Refusal, dated Jun. 9, 2009, issued in corresponding JP Application No. 2004-006800, 4 pages with partial English translation.
Fujinawa Jun
Kataoka Takashi
Nakada Junji
Shibata Norio
FUJIFILM Corporation
Mitchell James
Sughrue & Mion, PLLC
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