Pattern enhancement by crystallographic etching

Details Pattern enhancement by crystallographic etching Pattern enhancement by crystallographic etching

2008-06-24

2008-06-24

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

C216S039000, C216S099000, C438S700000, C438S705000, C438S717000, C438S719000, C438S734000, C438S745000

Reexamination Certificate

active

07390745

ABSTRACT:
A method for producing predetermined shapes in a crystalline Si-containing material that have substantially uniform straight sides or edges and well-defined inside and outside corners is provided together with the structure that is formed utilizing the method of the present invention. The inventive method utilizes conventional photolithography and etching to transfer a pattern, i.e., shape, to a crystalline Si-containing material. Since conventional processing is used, the patterns have the inherent limitations of rounded corners. A selective etching process utilizing a solution of diluted ammonium hydroxide is used to eliminate the rounded corners providing a final shape that has substantially straight sides or edges and substantially rounded corners.

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