Pattern-definition device for maskless particle-beam...

Radiant energy – Irradiation of objects or material

Reexamination Certificate

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C250S492220, C250S492230, C250S492300, C250S398000

Reexamination Certificate

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07084411

ABSTRACT:
In a pattern-definition device (102) for use in a particle-beam exposure apparatus, a beam of electrically charged particles is patterned through a plurality of apertures. The device comprises at least one deflector array means having a plurality of openings surrounding the beamlets, wherein for each opening are provided at least two deflecting electrodes to which different electrostatic potentials are appliable, thus correcting the path of the beamlet(s) passing through the respective opening according to a desired path through the device (102). According to a partition of the plurality of apertures into a set of subfields (Aij), the deflecting electrodes belonging to the same subfield (Aij) have common electric supplies. Thus, the electrostatic potentials of the deflecting electrodes belonging to the same subfield (Aij) are constant or linearly interpolated between basic potentials fed at basic points (Pij) of the respective subfield.

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patent: 2 367 689 (2002-10-01), None
Berry, I.L. et al.; “Programmable Aperture Plate for Maskless High-Throughput Nanolithography”; J. Vax. Sci. Technol. B 15(6); pp. 2382-2386; Nov./Dec. 1997; American Vacuum Society.
Muraki, M. et al.; “New Concept for High-Throughput Multielectron Beam Direct Write System”; J. Vac. Sci. Technol. B 18(6), pp. 3061-3066; Nov./Dec. 2000; American Vacuum Society.

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