Pattern correction method of semiconductor device

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C716S030000, C430S005000

Reexamination Certificate

active

07065739

ABSTRACT:
A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.

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