Pasted SOI substrate, process for producing the same and...

Details Pasted SOI substrate, process for producing the same and... Pasted SOI substrate, process for producing the same and...

2007-08-07

2007-08-07

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C257SE21568

Reexamination Certificate

active

10501522

ABSTRACT:
A plurality of recessed portions having different depths is formed in a surface of the active layer wafer or in a bonding surface of the supporting substrate wafer. Those wafers are bonded to each other with an insulation film interposed therebetween. This allows a cavity of higher dimensional precision to be buried therein. A plurality of cavities may be formed simultaneously in a plurality of locations within the plane of the substrate, which allows the thickness of the SOI layer to be set arbitrarily. Accordingly, such a semiconductor device can be fabricated easily in which a MOS type element and a bipolar element are formed on the same chip in a mixed manner.

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