Paste including a mixture of powders, connection plug,...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S640000, C438S675000, C438S977000

Reexamination Certificate

active

07049223

ABSTRACT:
Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.

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patent: 6057231 (2000-05-01), Givens et al.
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patent: 404058589 (1992-02-01), None
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patent: 8-17671 (1996-01-01), None
patent: 9-219577 (1997-08-01), None
patent: 10-56060 (1998-02-01), None
patent: 10-223833 (1998-08-01), None
Japanese Office Action dated Jul. 10, 2003, and English translation thereof.
Japanese Patent Office Action dated Nov. 4, 2003, and English translation thereof.

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