Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-23
2006-05-23
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S640000, C438S675000, C438S977000
Reexamination Certificate
active
07049223
ABSTRACT:
Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.
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Japanese Office Action dated Jul. 10, 2003, and English translation thereof.
Japanese Patent Office Action dated Nov. 4, 2003, and English translation thereof.
Hayasaka Nobuo
Hisatsune Yoshimi
Kimura Manabu
Sasaki Keiichi
Brewster William M.
Kabushiki Kaisha Toshiba
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