Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-29
2009-10-20
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S106000, C438S197000, C438S238000, C438S683000, C257SE21170, C257SE21304, C257SE21007, C257SE21229, C257SE21655, C257SE21218
Reexamination Certificate
active
07605092
ABSTRACT:
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in the first layer, forming metal regions on sidewalls of the trenches, and forming a region of dielectric or polymer material over or in the substrate. Moreover, an exemplary method may also include forming areas of metal regions on the sidewalls of the trenches such that planar strip portions of the areas form electrically conductive regions of the passive element(s) that are aligned substantially perpendicularly with respect to a primary plane of the substrate. Other exemplary embodiments may comprise various articles or methods including capacitive and/or inductive aspects, Titanium- and/or Tantalum-based resistive aspects, products, products by processes, packages and composites consistent with one or more aspects of the innovations set forth herein.
REFERENCES:
patent: 6459032 (2002-10-01), Luch
patent: 6582887 (2003-06-01), Luch
patent: 7394425 (2008-07-01), Luch
patent: 7413929 (2008-08-01), Lee et al.
Chen Bomy
Fang Sychyi
Wang Long Ching
DLA Piper (LLP) US
Nhu David
Silicon Storage Technology, Inc.
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