Passive element memory array incorporating reversible...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189040, C365S230060

Reexamination Certificate

active

07554832

ABSTRACT:
Circuits and methods are described for decoding exemplary memory arrays of programmable and, in some embodiments, re-writable passive element memory cells, which are particularly useful for extremely dense three-dimensional memory arrays having more thane one memory plane. In addition, circuits and methods are described for selecting one or more array blocks of such a memory array, for selecting one or more word lines and bit lines within selected array blocks, for conveying data information to and from selected memory cells within selected array blocks, and for conveying unselected bias conditions to unselected array blocks.

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Non-Final Office Action mailed Jan. 9, 2008, for U.S. Appl. No. 11/461,364, 19 pages.

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