Passivation with a low oxygen interface

Details Passivation with a low oxygen interface Passivation with a low oxygen interface

1986-07-07

1988-10-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, H01L 21306, B44C 122

Patent

active

047787767

ABSTRACT:
A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.

REFERENCES:
patent: 3884788 (1975-05-01), Maciolek et al.
patent: 4361461 (1982-11-01), Chong
Iosif et al., "Polysilicon Passivation of Semiconductor Devices", Thin Solid Films, 75, 2, 125-31, Jan 9, 1981.
Thomas et al., "A.E.S. and X.P.S. Studies of Semi-Insulating Polycrystalline Silicon (S.I.P.O.S.) Layers J. Electrochem. Soc., 128, 10, 1766-70.
Chu et al., "In Situ Etching of Silicon Substrates Prior to Epitaxial Growth", J. Electrochem. Soc., 113, 2, 156-8, 8/66.
Colcloser, Microelectronic Processing and Device Design, John Wiley & Sons, New York, 1980, pp. 44-46.

Affiliated with

Also associated with

Rating

Passivation with a low oxygen interface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Passivation with a low oxygen interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Passivation with a low oxygen interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1194955